Questions from Electronics

Q: a. Describe in your own words how the construction of the

a. Describe in your own words how the construction of the hot-carrier diode is significantly different from the conventional semiconductor diode. b. In addition, describe its mode of operation.

Q: Given the characteristics of Fig. 6.54: a

Given the characteristics of Fig. 6.54: a. Sketch the transfer characteristics directly from the drain characteristics. b. Using Fig. 6.54 to establish the values of IDSS and VP, sketch the transfer c...

Q: a. Describe in your own words why IG is effectively 

a. Describe in your own words why IG is effectively  A for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important th...

Q: Given IDSS = 12 mA and  VP  = 6 V

Given IDSS = 12 mA and  VP  = 6 V, sketch a probable distribution of characteristic curves for the JFET (similar to Fig. 6.11).

Q: In general, comment on the polarity of the various voltages and

In general, comment on the polarity of the various voltages and direction of the currents for an n-channel JFET versus a p-channel JFET.

Q: For the fixed-bias configuration of Fig. 7.75

For the fixed-bias configuration of Fig. 7.75: a. Sketch the transfer characteristics of the device. b. Superimpose the network equation on the same graph. c. Determine IDQ and VDSQ. d. Using Shockley...

Q: For the network of Fig. 7.83, determine:

For the network of Fig. 7.83, determine: a. ID. b. VDS. c. VD. d. VS.

Q: Find VS for the network of Fig. 7.84.

Find VS for the network of Fig. 7.84.

Q: For the network of Fig. 7.85, determine:

For the network of Fig. 7.85, determine: a. VG. b. IDQ and VGSQ. c. VD and VS. d. VDSQ.

Q: a. Repeat Problem 12 with RS = 0.51 kΩ

a. Repeat Problem 12 with RS = 0.51 kΩ (about 50% of the value of that of Problem 12). What is the effect of a smaller RS on IDQ and VGSQ? b. What is the minimum possible value of RS for the network o...