Questions from Electronics

Q: For the network of Fig. 7.94, determine:

For the network of Fig. 7.94, determine: a. IDQ. b. VGSQ and VDSQ. c. VD and VS. d. VDS.

Q: For the voltage-divider configuration of Fig. 7.95

For the voltage-divider configuration of Fig. 7.95, determine: a. IDQ and VGSQ. b. VD and VS.

Q: For the network of Fig. 7.96, determine:

For the network of Fig. 7.96, determine: a. VG. b. VGSQ and IDQ. c. IE. d. IB. e. VD. f. VC.

Q: Determine the saturation current (ICsat) for the network of Fig

Determine the saturation current (ICsat) for the network of Fig. 4.122.

Q: For the combination network of Fig. 7.97, determine

For the combination network of Fig. 7.97, determine: a. VB and VG. b. VE. c. IE, IC, and ID. d. IB. e. VC, VS, and VD. f. VCE. g. VDS.

Q: Design a self-bias network using a JFET transistor with IDSS

Design a self-bias network using a JFET transistor with IDSS = 8 mA and VP = - 6 V to have a Q-point at IDQ = 4 mA using a supply of 14 V. Assume that RD = 3RS and use standard values.

Q: Design a voltage-divider bias network using a depletion-type

Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP = - 4 V to have a Q-point at IDQ = 2.5 mA using a supply of 24 V. In addition, set VG = 4 V and use RD = 2....

Q: Design a network such as appears in Fig. 7.39

Design a network such as appears in Fig. 7.39 using an enhancement-type MOSFET with PROBLEMS 479 VGS (Th) = 4 V and k = 0.5 * 10-3 A>V2 to have a Q-point of ID= 6 mA. Use a supply of 16 V and standard...

Q: What do the readings for each configuration of Fig. 7.

What do the readings for each configuration of Fig. 7.98 suggest about the operation of the network?

Q: Given the measured value of VD in Fig. 7.77

Given the measured value of VD in Fig. 7.77, determine: a. ID b. VDS c. VGG